@TechReport{SilvaKishLima:1980:ApSpHe,
               author = "Silva, Antonio Ferreira da and Kishore, Ram and Lima, Ivan Costa 
                         da Cunha",
                title = "The hubbard model for the disordered systems: in application to 
                         the specific heat of the phosphorus-doped silicon",
          institution = "Instituto Nacional de Pesquisas Espaciais",
                 year = "1980",
                 type = "RPQ",
               number = "INPE-1862-RPE/212",
              address = "S{\~a}o Jos{\'e} dos Campos",
             keywords = "disordered systems, doped semiconductors, specific heat.",
             abstract = "A self consistent many body theory of the disordered systems, 
                         described by the Hubbard Hamiltonian with random transfer 
                         integral, is deve loped. The rondam nature of the system is taken 
                         into account by the Matsubara-Toyozawa theory of impurities 
                         insemiconductors. By considering the hidrogen like impurity 
                         states, the electronic specific heat of the uncompensated 
                         phosphorus doped silicon is calculated and compared with the 
                         experimental results. It is found that it agrees well with the 
                         experiment in the entire semiconductor to the dilute metal lic 
                         region.",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
             language = "en",
                pages = "27",
                  ibi = "8JMKD3MGP3W34R/3QUPS2E",
                  url = "http://urlib.net/ibi/8JMKD3MGP3W34R/3QUPS2E",
        urlaccessdate = "2024, Apr. 29"
}